Physics for Information Science: Unit II: Semiconductor Physics
Variation of Fermi Energy Level with Temperature and Impurity Concentration in 'p' - Type Semiconductor
When the temperature is increased, some of the electrons in the valence band will go to acceptor energy levels by breaking up the covalent bonds and hence the Fermi level is shifted in upward direction
VARIATION
OF FERMI ENERGY LEVEL WITH TEMPERATURE AND IMPURITY CONCENTRATION IN P-TYPE
SEMICONDUCTOR
When
the temperature is increased, some of the electrons in the valence band will go
to acceptor energy levels by breaking up the covalent bonds and hence the Fermi
level is shifted in upward direction for doping level of Nd = 1021
atoms/m3 as shown in Fig. 2.20.
From
the Fig. 2.20 it can be seen that for the same temperature, if the impurity
atoms (i.e.,) doping level is increased say Na = 1024
atoms/m3, the hole concentration increases and hence the Fermi level
decreases.
Therefore
at low temperature the Fermi energy level may be increased upto the level of
intrinsic energy level (Ei)
Results
•
Density of holes (nh) in the valence band is proportional to the
square root of the acceptor energy level.
•
When temperature is increased the Fermi energy level increases, at low
temperature it increases upto intrinsic Fermi level (Ei).
Physics for Information Science: Unit II: Semiconductor Physics : Tag: : - Variation of Fermi Energy Level with Temperature and Impurity Concentration in 'p' - Type Semiconductor
Physics for Information Science: Unit II: Semiconductor Physics
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Physics for Information Science
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