A semiconductor slab of thickness 't' and breadth 'b' is taken and current is passed using the battery
DEVICE
TO FIND HALL EFFECT [EXPERIMENT]
A
semiconductor slab of thickness 't' and breadth 'b' is taken and current is
passed using the battery as shown in Fig. 2.30.
The
slab this placed between the pole pieces of an electromagnet so that current
direction coincides with x-axis and magnetic field coincides with z-axis. The
Hall voltage (VH) is measured by placing two probes at the center of
the top and bottom faces of the slab (y-axis).
If
B is magnetic field applied and the V is the Hall voltage produced, then the
Hall coefficient can be calculated from the formula
In
general the Hall Co-efficient can be written as
The
above expression is valid only for conductors where the velocity is taken as
the drift velocity.
But
for semiconductors velocity is taken as average velocity so RH for
an 'n' type semiconductor is modified as
………(1)
We
know the conductivity for n type is σe =ne eμe
(or) ……….(2)
From
equation (1) we can write
………(3)
Substituting
equation (3) in equation (2) we get
The
mobility of electron is in an n-type semiconductor is
Similarly
for p-type Semiconductor, the mobility of hole is
Thus
by finding Hall voltage, Hall coefficient can be calculated and thus the
mobility of the charge carriers (μe and μh) can also be
determined.
We
know if the current (Ex) is applied to a specimen along x direction,
magnetic field (B) along z-direction then Hall voltage (EH) is
produced along y-direction (Fig 2.31).
Here
the Hall angle can be measured from the formula
…….(1)
we
know, ЕH = RHJX B ………(2)
We
know EH=Vx B ……..(3)
Substituting
equation (3) in equation (1) we get
(or)
Where
μ = Vx/Ex
Thus
the mobility (μ) can be defined as the velocity acquired by the charge carrier
per unit electric field.
Physics for Information Science: Unit II: Semiconductor Physics : Tag: : Semiconductor - Device to Find Hall Effect [Experiment]
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