Physics for Information Science: Unit II: Semiconductor Physics
Mobility and Electrical Conductivity of Intrinsic Semiconductors
The electrical conductivity (σ) of an intrinsic semiconductor in terms of mobility of charge carriers.
MOBILITY
AND ELECTRICAL CONDUCTIVITY OF INTRINSIC SEMICONDUCTORS
The
electrical conductivity (σ) of an intrinsic semiconductor in terms of mobility
of charge carriers is given by
σi
=ni e (μe+μh) ……..(1)
Where,
ni→ intrinsic carrier concentration
e
→ charge of the electron
μe→
mobility of electrons
μh
→ mobility of holes.
Note:
Mobility of electrons or holes is defined
as the velocity gained by an electron or hole under unit potential gradient.
Substituting
the value of ni from equation (17) in equation (1) we have
Here
the electrical conductivity depends on the exponential of forbidden energy gap
between valence band and conduction band and on the mobility of charge
carriers, both μe and μh. But the term (μe + μh.)
has a temperature dependence and it will cancel with the T3/2 term
and hence we can write
………(2)
where
C is a constant.
Taking
log on both sides we have
log
σi = log C – (Eg/2KBT)
If
a plot is made between log σi and 1/T we get a straight line here σi
increases with temperature. as shown in Fig. 2.10.
Physics for Information Science: Unit II: Semiconductor Physics : Tag: : - Mobility and Electrical Conductivity of Intrinsic Semiconductors
Physics for Information Science: Unit II: Semiconductor Physics
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Physics for Information Science
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