Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
HWR - 1 diodes, Center tapped FWR - 2 diodes, FW Bridge - 4 diodes
Circuit diagram, Operation, Merits, Demerits
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
It is built around a four - diode bridge configuration. This design is called as full wave bridge. It is most popular of full wave rectifier design.
Circuit diagram, Operation, Formula, Calculation, Disadvantages, Merits, Demerits
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
This circuit's operation is easily understood one half-cycle a time. Consider the first half cycle, when the source voltage polarity is positive on top and negative on bottom.
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
A full wave rectifier converts the whole of the input waveform to one of constant polarity (Positive or negative) at its output by reversing the negative (or positive) portions of the alternating current waveform.
Circuit diagram, Operation, Formula, Calculation, Advantages, Disadvantages
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
Half wave rectifier consists of step down transformer, PN junction diode and load resistance.
Parameters, Type
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
A rectifier is an electrical circuit that converts alternating currents to direct current, and the process is known as rectification.
Construction, Operation, Characteristics, Basic Structure, Symbol, Advantages, Disadvantages
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
IGBT combines positive attributes of BJT's and MOSFET's.It has 3 terminals gate(G), Emitter (E) and collector(C).
Construction, Operation, Characteristics, Basic Structure, Symbol
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
The metal oxide semiconductor field effect transistor is a semiconductor device widely used for switching purposes
Construction, Operation, Characteristics, Basic Structure, Symbol
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
It is a four layer, three junction and three terminal device.
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
The curves which relate device current and voltage are known as characteristics curves. There are two important characteristics of a JFET.
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
The P type gate and N-type channel constitute PN junction. This PN junction is always reverse biased in JFET operation.
Subject and UNIT: Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
The JFET consists of a P-type (or) N-type silicon bar containing two PN junction at the sides.