Basic Electrical and Electronics Engineering: Unit III: Analog Electronics
Insulated Gate Biplolar Transistor (IGBT)
Construction, Operation, Characteristics, Basic Structure, Symbol, Advantages, Disadvantages
IGBT combines positive attributes of BJT's and MOSFET's.It has 3 terminals gate(G), Emitter (E) and collector(C).
INSULATED
GATE BIPLOLAR TRANSISTOR (IGBT)
•
IGBT combines positive attributes of BJT's and MOSFET's.
•
It has 3 terminals gate(G), Emitter (E) and collector(C).
•
4 layer NPNP.
•
Input characteristics same as MOSFET and output is same as BJT.
Operation
•
N-channel IGBT turns on when the collector is at positive potential
with respect to emitter and also gate is at sufficient positive potential (VGET)
with respect to emitter.
•
This condition leads to formation of an inversion layer just below the gate,
leading to a channel formation and current begins to how form collector to
emitter.
•
Collector current IC in IGBT constitutes of two
components Ie and In [Ie→ due to injected electron and Ih→hole
current]
•
Ic = Ie + In
In
is almost negligible so Ic ≈ Ie
Advantages
•
Lower gate drive requirements
•
Low switching losses
•
Small snubber circuit requirement
•
High input impedance
Disadvance
•
Cost high
•
High turn off time.
Basic Electrical and Electronics Engineering: Unit III: Analog Electronics : Tag: : Construction, Operation, Characteristics, Basic Structure, Symbol, Advantages, Disadvantages - Insulated Gate Biplolar Transistor (IGBT)
Related Topics
Related Subjects
Basic Electrical and Electronics Engineering
BE3251 2nd semester Mechanical Dept | 2021 Regulation | 2nd Semester Mechanical Dept 2021 Regulation
Basic Electrical and Electronics Engineering
BE3251 2nd Semester CSE Dept 2021 | Regulation | 2nd Semester CSE Dept 2021 Regulation